Determination of the carrier density dep
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E. Tiras; M. Tanisli; N. Balkan; S. Ardali; E. Iliopoulos; A. Georgakilas
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Article
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2012
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John Wiley and Sons
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English
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## Abstract The vibrational properties of InN samples grown by molecular beam epitaxy (MBE) technique have been studied using infrared (IR) and Raman scattering spectroscopy at room temperature. In the Raman measurements, the 532โnm (2.33โeV) line of laser was used as the excitation source. Lower b