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A low-temperature metal-doping technique for engineering the gate electrode of replacement metal gate CMOS transistors

✍ Scribed by J. Pan; C. Woo; M. Ngo; P. Besser; J. Pellerin; Qi Xiang; Ming-ren Lin


Book ID
126639805
Publisher
IEEE
Year
2003
Tongue
English
Weight
255 KB
Volume
24
Category
Article
ISSN
0741-3106

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