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A low-power CMOS dual-band RF receiver for IEEE 802.15.4-based sensor node applications

✍ Scribed by Trung-Kien Nguyen; Hoyong Kang; Nae-Soo Kim; Cheol-Sig Pyo


Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
336 KB
Volume
52
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

This article presents the design and experimental results of a low‐power dual‐band RF receiver front‐end including a dual‐band low‐noise amplifier (LNA) and a downconversion mixer based on the IEEE 802.15.4 standard for sensor node applications. A dual‐band LNA with two inputs is tuned to two resonant frequencies by controlling the voltage on a switched MOS. The implemented RF receiver front‐end achieves a maximum voltage conversion gain of 31 and 21 dB, a noise figure of 6 and 9 dB at the 868/915 MHz and 2.45 GHz bands, respectively. The RF receiver front‐end dissipates a total of 3 mA (including I/Q mixers) under a supply voltage of 1.8 V at both operation bands. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 163–166, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24876