## Abstract This letter presents a full band low power low noise amplifier design in 0.18‐μm complementary metal‐oxide‐semiconductor FET (CMOS) technology.The proposed circuit adopts current reused technique to achieve low power consumption, and shunt resistive feedback for wide‐band operation. An
A low-noise UWB cmos mixer using current bleeding and resonant inductor techniques
✍ Scribed by Goo-Young Jung; Jae-Hoon Shin; Tae-Yeoul Yun
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 194 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This article presents a direct down‐conversion mixer for ultra‐wideband systems on 0.18 μm RF CMOS process. The proposed mixer uses a current bleeding technique and an internal resonant inductor to improve the conversion gain and noise figure of the conventional Gilbert‐cell mixer. Effects of each technique are compared on mixer's noise performance. Measured results show the conversion gain of 7.5–10.1 dB and the double side‐band noise figure of 8.8–12.5 dB at Band 1 (3.168–3.696 GHz) and the gain of −1.4 to 1.6 dB and the double side‐band noise figure of 12.2–17.6 dB at Band 13 (9.768–10.296 GHz). The circuit operates at the supply voltage of 1.8 V and dissipates 13.24 mW. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1595–1597, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22559
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