A Ka-band CMOS power amplifier using new substrate-shielded coplanar waveguide
✍ Scribed by Jong-Wook Lee; Sang-Moo Heo
- Book ID
- 102518908
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 235 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A Ka‐band three‐stage power amplifier was developed in 0.18 μm CMOS technology using a new substrate‐shielded coplanar waveguide (CPW). The new CPW structure reduces the loss from the conductive silicon substrate allowing high gain for the amplifier. Broadband modeling of substrate‐shielded CPW in conjunction with the RF transistor model up to 40 GHz resulted in accurate gain matching of the amplifier. The power amplifier achieved a 12 dB small‐signal gain at 26.5 GHz, which is the highest for Ka‐band CMOS power amplifiers using common‐source transistors. The measured output power was 12.5 dBm with a power‐added‐efficiency of 8% at 26.5 GHz. These results show that scaled‐down CMOS technology is a viable option for low‐cost microwave and millimeter‐wave circuits. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2815–2817, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23827