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A K-band InGaP/GaAs HBT balanced MMIC VCO

✍ Scribed by Jeong-Geun Kim, ; Dong-Hyun Baek, ; Sanghoon Jeon, ; Jae-Woo Park, ; Songcheol Hong

Book ID
121278115
Publisher
IEEE
Year
2003
Tongue
English
Weight
516 KB
Volume
13
Category
Article
ISSN
1531-1309

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## Abstract A 24‐GHz single‐pole, single‐throw (SPST) switch with high isolation is designed using InGaP/GaAs HBT process. To obtain high isolation in an off state, cascode structures are utilized and an additional shunt transistor is introduced in an output, which helps to reject a leakage signal.