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A K-band balanced subharmonically pumped image rejection mixer using 0.15-μm GaAs pHEMT technology

✍ Scribed by Po-Yu Ke; Hsien-Chin Chiu; Che-Yu Kuo; Jeffrey S. Fu; Yi-Chyun Chiang


Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
394 KB
Volume
53
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

This work presents a K‐band balance single side‐band subharmonically pumped image rejection diode mixer (SHIRM).It uses lumped elements and three‐conductor‐line quadrature couplers and is fabricated in a 0.15‐μm GaAs process. The SHIRM is realized in size reduction by using two antiparallel diode pairs for frequency mixing. The three‐conductor‐line bending coupler is 55% reduction in size compared to the nonbending one for radio frequency port, and lumped elements realization is 62% smaller in size than the quarter‐wavelength line for local oscillator port. The proposed circuit with a symmetric layout provides good matches on amplitude and phase performances. The measured results exhibit a minimum conversion loss of 13 dB, a maximum image rejection ratio of 19 dB. All ports isolations are better than 10 dB. The chip area is only 1.5 × 1 mm^2^. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:485–488, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25781