## Abstract A consistent hydrodynamical model for electron transport in silicon semiconductors, free of any fitting parameter, has been formulated in Anile and Romano (__Continuum Mechanics Thermodynamics__ 1999; **11**:307β325) and Romano (__Continuum Mechanics Thermodynamics__ 1999; **12**:31β51)
β¦ LIBER β¦
A hydrodynamic transport model and its applications in semiconductor device simulation
β Scribed by Yaxi Zhang; M. El Nokali
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 759 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0038-1101
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