A highly reliable ferroelectric memory technology with SrBi2 Ta2O9-based material and metal covering cell structure

✍ Scribed by Fajii, E.; Judai, Y.; Ito, T.; Kutsunai, T.; Nagano, Y.; Noma, A.; Nasu, T.; Izutsu, Y.; Mikawa, T.; Yasuoka, H.; Azuma, M.; Shimada, Y.; Sasai, Y.; Sato, K.; Otsuki, T.

• Book ID: 114538706
• Publisher: IEEE
• Year: 2001
• Tongue: English
• Weight: 138 KB
• Volume: 48
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.925253