A high voltage-gain GaAs vertical field-effect transistor with an InGaAs/GaAs planar-doped barrier launcher

✍ Scribed by Won, Y.H.; Yamasaki, K.; Daniels-Race, T.; Tasker, P.J.; Schaff, W.J.; Eastman, L.F.

• Book ID: 118024498
• Publisher: IEEE
• Year: 1990
• Tongue: English
• Weight: 304 KB
• Volume: 11
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/55.62961