A high-speed 1 Kbit high electron-mobility transistor static RAM: N H Sheng, H T Wang (Rockwell Int. Sci. Center, Thousand Oaks, CA, USA), C P Lee, G J Sullivan, D L Miller IEEE Trans. Electron. Devices (USA), vol. ED-34, no. 8, pt. 1, pp 1670–1675 (Aug. 1987)

• Book ID: 108361523
• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 95 KB
• Volume: 19
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(88)80201-5