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A high-precision study of excited-state transitions of shallow donors in semiconductors

✍ Scribed by Skolnick, M. S.; Carter, A. C.; Couder, Y.; Stradling, R. A.

Book ID
115384302
Publisher
Optical Society of America
Year
1977
Weight
467 KB
Volume
67
Category
Article
ISSN
0030-3941

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πŸ“œ SIMILAR VOLUMES

Extended states of a shallow donor locat
Extended states of a shallow donor located near a semiconductor–insulator interface
✍ Andriy Kovalenko πŸ“‚ Article πŸ“… 1998 πŸ› John Wiley and Sons 🌐 English βš– 623 KB

Scattering of a conduction electron by a charged shallow donor located near a semiconductor᎐insulator interface in the semiconductor or by a charged center embedded in the insulator is considered within the model of a hydrogenlike atom in a semi-infinite space. The interface influence is allowed for