✦ LIBER ✦

A high-performance lateral geometry transistor for complementary integrated circuits

✍ Scribed by Hilbiber, D.F.

Book ID: 114589158
Publisher: IEEE
Year: 1967
Tongue: English
Weight: 563 KB
Volume: 14
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1967.15966

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A high-performance lateral geometry tran

A high-performance lateral geometry transistor for complementary integrated circuits : David F. Hilbiber, IEEE Trans. Electron. Dev.ED-14, No. 7 July (1967), p. 381

📂 Article 📅 1968 🏛 Elsevier Science 🌐 English ⚖ 100 KB

A complementary III–V heterostructure fi

A complementary III–V heterostructure field effect transistor technology for high temperature integrated circuits

✍ Craig Wilson; Anthony O'Neill; Steven Baier; James Nohava 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 344 KB

Dual gate lateral inversion layer emitte

Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits

✍ Udugampola, U.N.K.; McMahon, R.A.; Udrea, F.; Sheng, K.; Amaratunga, G.A.J.; Nar 📂 Article 📅 2004 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 469 KB

A simple self-aligned Si bipolar transis

A simple self-aligned Si bipolar transistor for high-speed integrated circuits

✍ Schreiber, H.-U. 📂 Article 📅 1989 🏛 IEEE 🌐 English ⚖ 241 KB

[IRE 1969 International Electron Devices

[IRE 1969 International Electron Devices Meeting - ()] 1969 International Electron Devices Meeting - Compatible, high performance complementary bipolar transistors for integrated circuits

✍ Polata, B. 📂 Article 📅 1969 🏛 IRE ⚖ 103 KB

A VMOS-bipolar compatible technology for

A VMOS-bipolar compatible technology for high-performance analog integrated circuits

✍ Holmes, F.E. 📂 Article 📅 1977 🏛 IEEE 🌐 English ⚖ 440 KB