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A GaAs/AlAs Wet Selective Etch Process for the Gate Recess of GaAs Power Metal-Semiconductor Field-Effect Transistors

✍ Scribed by Chang, E. Y.; Lai, Yeong-Lin; Lee, Y. S.; Chen, S. H.


Book ID
121404171
Publisher
The Electrochemical Society
Year
2001
Tongue
English
Weight
654 KB
Volume
148
Category
Article
ISSN
0013-4651

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