A fully CMOS-compatible infrared sensor fabricated on SIMOX substrates
✍ Scribed by M. Müller; R. Gottfried-Gottfried; H. Kück; W. Mokwa
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 474 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0924-4247
No coin nor oath required. For personal study only.
✦ Synopsis
We report on the use of SIMOX substrates for fabrtcatlon of IR radlatlon thermopdes by CMOS technology SIMOX technology enables the fabrlcatlon of smgle-crystal leads on thm &con or s&con oxide membranes Two p-type ahcon/ahmnmum thermopdes on ddferent membranes are presented A thermopde urlth a 4 pm thick, epltaxlally grown silicon membrane has a responsrvlty of 18 V/W and a Wne constant of 3 ms Using a 25 pm thick uhcon oxide membrane, a responslvlly of 150 V/W and a tune constant of 25 ms are achieved In ad&Ion, the fabncatlon and properties of an IR absorber made m CMOS technology are presented