A fully analytical model to describe the
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G. Torrese; A. Salamone; I. Huynen; A. Vander Vorst
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Article
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2001
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John Wiley and Sons
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English
⚖ 193 KB
## Abstract This paper presents a novel fully analytical model describing the high‐frequency behavior of __p__‐__i__‐__n__ photodiodes. The transport equations are solved, taking into account the dependence of the carrier velocities on the electric field, while the RC‐product effect is considered b