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A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths

✍ Scribed by Loquai, S.; Bunge, C.-A.; Ziemann, O.; Schmauss, B.; Kruglov, R.


Book ID
115373322
Publisher
Optical Society of America
Year
2010
Tongue
English
Weight
925 KB
Volume
28
Category
Article
ISSN
0733-8724

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## Abstract This paper presents a novel fully analytical model describing the high‐frequency behavior of __p__‐__i__‐__n__ photodiodes. The transport equations are solved, taking into account the dependence of the carrier velocities on the electric field, while the RC‐product effect is considered b