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A field emission retarding potential method for measuring work functions

โœ Scribed by A.A. Holscher


Book ID
118979479
Publisher
Elsevier Science
Year
1966
Tongue
English
Weight
864 KB
Volume
4
Category
Article
ISSN
0039-6028

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A field-emission retarding-potential dev
๐Ÿ“‚ Article ๐Ÿ“… 1978 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 159 KB

Classified abstracts 3373-3384 11 3373. Some properties of the oxides of the tetrahedral semiconductors and the oxide-semiconductor interfaces. (USA) Continuous-random-network models have been constructed for the Si-SiOl interface. It is found that an abrupt interface with no SiO, layer is possible.