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A digital oscilloscope setup for the measurement of a transistor’s characteristic curves

✍ Scribed by de Buyl, Pierre

Book ID
118185868
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
691 KB
Volume
78
Category
Article
ISSN
0002-9505

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✍ Ting-Kuo Kang 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 491 KB

A simple four-point-bending setup integrated with a foil strain gauge is presented for the direct measurement of mechanical stress (MS) on metal-oxide-semiconductor field-effect transistors (MOSFETs). The magnitude of the external MS applied to MOSFETs can be directly obtained through the resistance