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A difficulty in the theory of p+-n junction diode noise

✍ Scribed by A. van der Ziel


Book ID
107856430
Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
118 KB
Volume
22
Category
Article
ISSN
0038-1101

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Electrical and low frequency noise prope
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## Abstract The electrical and low frequency noise properties of 4H‐SiC p^+^–n–n^+^ junctions have been investigated at different temperatures. The forward current–voltage characteristics are described as the sum of a recombination current originating from carrier recombination on the sidewall of t