✦ LIBER ✦
A device model for an ion-implanted MESFET with Half-Pearson and Half-Gaussian distribution under post-anneal conditions
✍ Scribed by Haldar, S.; Maneesha; Khanna, M.K.; Gupta, R.S.
- Book ID
- 114535885
- Publisher
- IEEE
- Year
- 1994
- Tongue
- English
- Weight
- 350 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0018-9383
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