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A detailed photoluminescence study of crystallized a-Si:H multiquantum-well structures

✍ Scribed by K.J. Chen; X.F. Huang; J. Xu; S. Yamasaki; K. Tanaka; H. Kawanami; H. Oheda; A. Matsuda


Book ID
115989293
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
287 KB
Volume
164-166
Category
Article
ISSN
0022-3093

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On photoluminescence properties of a-Si:
✍ R. Brunner; E. Pinčík; H. Kobayashi; M. Kučera; M. Takahashi; J. RusnΓ‘k πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 671 KB

Non-Gaussian photoluminescence peaks observed in a-Si:H-based structures at 6 K are interpreted as a consequence of the presence of different phases in material. Thin films of amorphous silicon deposited on glass substrate have been analyzed. The main aims of the contribution are (i) analysis of nu