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A current-sensed high-speed and low-power first-in-first-out memory using a wordline/bitline-swapped dual-port SRAM cell

✍ Scribed by Shibata, N.; Watanabe, M.; Tanabe, Y.


Book ID
111863128
Publisher
IEEE
Year
2002
Tongue
English
Weight
718 KB
Volume
37
Category
Article
ISSN
0018-9200

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