A cryogenic associative memory

✍ Scribed by C.C. Yang; Julius T. Tou

• Publisher: Elsevier Science
• Year: 1967
• Tongue: English
• Weight: 739 KB
• Volume: 284
• Category: Article
• ISSN: 0016-0032
• DOI: 10.1016/0016-0032(67)90583-2

✦ Synopsis

A. new associative memory system composed of persistent-current bit-cells is developed. Each word of the memory system is associated with a selection and control network which is made up of only seven cryotrons. In the proposed system both reading and writing circuits are derived from three-terminal networks with complementary outputs. The writeselection lines are not connected in series, nor are the read-selection lines. Inductance of the circuit for reading or writing a word is made independent of the total number of word positions in the memory. Logic equations describing the reading, writing and comparison circuits are discussed. In this system the processes of comparison, including enabled and enabled-masked operations, sequential nondestructive reading or single individual word destructive reading, and automatic sequential writing, are performed in a simple manner. Furthermore, the matching condition of comparison and the termination of sequential writing and reading processes can be readily indicated.