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A constitutive single crystal model for the silicon mechanical behavior: Applications to the stress induced by silicided lines and STI in MOS technologies

✍ Scribed by F. Cacho; S. Orain; G. Cailletaud; H. Jaouen


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
532 KB
Volume
47
Category
Article
ISSN
0026-2714

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