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A concave-type structure of a Ru electrode capacitor fabricated by the reactive ion etching method

✍ Scribed by Byong-Sun Ju; Hyoun Woo Kim


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
766 KB
Volume
70
Category
Article
ISSN
0167-9317

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✦ Synopsis


We have developed a concave-type Ru electrode capacitor to overcome the limitation of conventional stack-type capacitor in a small critical-dimension (CD) pattern. We have deposited a Ru layer on the concave-type structure made by patterning of SiO and subsequently we separated the adjacent nodes by an etch-back process with hydrogen silsesquioxane (HSQ) as a 2 protecting layer. We have summarized the issues regarding the patterning in the reactive ion etching system for fabricating the concave-type capacitor.