The diffusion of Ga into bulk-grown, single crystal slices of CdTe was studied in the temperature range 350-811 ยฐC where the diffusion anneals were carried out in sealed silica capsules using three different types of diffusion sources. These were: excess Ga used alone, or with either excess Cd or ex
โฆ LIBER โฆ
A comparison of the diffusion of copper, gallium and cadmium in cadmium telluride
โ Scribed by E. D. Jones; N. M. Stewart; J. B. Mullin
- Book ID
- 111997794
- Publisher
- John Wiley and Sons
- Year
- 1994
- Tongue
- English
- Weight
- 392 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1616-301X
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