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A comparison of SiO2 thin-film UVCVD rates and mechanisms from SiH4/O2 and SiH4/N2O precursor gases by surface-sensitive infrared spectroscopy

✍ Scribed by C. Debauche; C. Licoppe; J. Flicstein


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
568 KB
Volume
69
Category
Article
ISSN
0169-4332

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