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A comparison of hydrogen incorporation and effusion in doped crystalline silicon, germanium, and gallium arsenide

✍ Scribed by M. Stutzmann; J.-B. Chevrier; C. P. Herrero; A. Breitschwerdt


Publisher
Springer
Year
1991
Tongue
English
Weight
767 KB
Volume
53
Category
Article
ISSN
1432-0630

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