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A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors

✍ Scribed by M.M. De Souza; J. Wang; S. Manhas; E.M. Sankara Narayanan; A.S. Oates


Book ID
108361796
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
539 KB
Volume
41
Category
Article
ISSN
0026-2714

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