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A comparison between secondary-ion mass-spectrometry and spark-source mass-spectrometry for the quantitative analysis of steel wire

✍ Scribed by M. Van Craen; J. Verlinden; R. Gijbels; F. Adams

Book ID
118993640
Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
486 KB
Volume
29
Category
Article
ISSN
0039-9140

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Quantitative analysis of the native oxide on silicon wafers has been investigated by secondary ion mass spectrometry (SIMS) combined with an encapsulation method. In the encapsulation technique, the sample surface is covered with a thin Ðlm whose material is identical to that of the substrate of the