A comparative study on low-energy ion beam and neutralized beam modifications of naked DNA and biological effect on mutation

A nuclear reaction analysis and optical

A nuclear reaction analysis and optical microscopy study on controlled growth of large SiC nanocrystals on Si formed by low-energy ion implantation and electron beam annealing

✍ A. Markwitz; F. Lucas; J. Rusterucci; J. Kennedy; W.J. Trompetter; M. Rudolphi; 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 263 KB

Ion implantation of 20 keV 12 C + ions into (1 0 0), p-type silicon with ion fluence of 8 • 10 16 at. cm À2 followed by an electron beam annealing under high vacuum conditions has been performed to investigate the formation of crystalline nano-scale SiC features on the silicon surface. Depending on