A comparative study of ion implantation
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V.P. Markevich
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Article
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2006
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Elsevier Science
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English
โ 334 KB
The possibility of making devices which use the high charge carrier mobility of Ge in mainstream semiconductor technology has drawn attention to the very limited understanding of ion implantation damage in germanium and the defect reactions associated with its removal. Results of DLTS and high-resol