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A comparative investigation on growth, nanostructure and electrical properties of copper oxide thin films as a function of annealing conditions

✍ Scribed by Khojier, K.; Savaloni, H.; Sadeghi, Z.

Book ID
121540759
Publisher
Springer-Verlag
Year
2014
Tongue
English
Weight
725 KB
Volume
8
Category
Article
ISSN
2251-7235

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## Abstract Copper oxide thin films were obtained by annealing (temperature ranging between 100 and 450 °C) the metallic Cu films deposited on glass substrates by e‐beam evaporation. XRD studies confirmed that the cubic Cu phase of the as‐deposited films changes into single cubic Cu~2~O phase and s