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A Compact Model of Phase-Change Memory Based on Rate Equations of Crystallization and Amorphization

✍ Scribed by Sonoda, K.; Sakai, A.; Moniwa, M.; Ishikawa, K.; Tsuchiya, O.; Inoue, Y.


Book ID
114619437
Publisher
IEEE
Year
2008
Tongue
English
Weight
522 KB
Volume
55
Category
Article
ISSN
0018-9383

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## Abstract An intrinsic equivalent‐circuit model for quantum‐well lasers is presented. The model is based on the three‐level rate equations, and includes the carrier transport effects and the role of the gateway state at the quantum well. The simulation results of the frequency response are compar