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A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI

✍ Scribed by Aichinger, T.; Nelhiebel, M.; Grasser, T.


Book ID
114619821
Publisher
IEEE
Year
2009
Tongue
English
Weight
666 KB
Volume
56
Category
Article
ISSN
0018-9383

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