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A catalyst-free method to silicon nanowires at relative low temperature

โœ Scribed by Hui-Ling Zhu; Ning Lun; Zheng Zhang; Rui Liu; Xiang-Lin Meng; Bo Zhang; Fu-Dong Han; Yu-Jun Bai; Jian-Qiang Bi; Run-Hua Fan


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
548 KB
Volume
312
Category
Article
ISSN
0022-0248

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โœฆ Synopsis


Well-crystallized straight Si nanowires (SiNWs) were successfully prepared in large scale via a facile reaction between NaN 3 and Na 2 SiF 6 at 600 1C without using any catalyst. Characterization by X-ray powder diffraction and transmission electron microscopy demonstrates that the as-obtained product is pure-phase cubic SiNWs with diameters of 40 nm or so, and lengths of several micrometers. And the SiNWs with spherical tips can be obtained at a temperature as low as 300 1C. Heating temperature and holding time have crucial influence on the synthesis and morphology of the SiNWs. An oxide-assisted growth mechanism is responsible for the formation of the SiNWs.


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