A carbonaceous thin film made by CVD and its application for a carbon/n-type silicon (C/n-Si) photovoltaic cell

✍ Scribed by H.A. Yu; T. Kaneko; S. Otani; Y. Sasaki; S. Yoshimura

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 668 KB
• Volume: 36
• Category: Article
• ISSN: 0008-6223
• DOI: 10.1016/s0008-6223(97)00170-x

✦ Synopsis

A carbonaceous thin film was made by CVD of 2,5-dimethyl-p-benzoquinone at temperatures between 500 and 1000°C and its structural and electronic properties have been studied. The carbonaceous thin film made at 500°C has a energy bandgap of 0.25-0.3 eV and a positive Hall coefficient of 5 x 1O-5 m3 C-' belong to a p-type semiconductor. A photovoltaic cell with carbonaceous thin film/ntype silicon (C/n-s) was fabricated by depositing the carbonaceous thin film on an n-type silicon substrate at 500°C. The C/n-Si photovoltaic cell has a hetero-type junction with a junction barrier of 0.54 eV and a depletion layer of 1.1 pm in thickness at zero bias. Under a simulated light of 15 mW .crn-', the C/&i photovoltaic cell gives a power conversion efficiency of 6.45%.