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A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory

✍ Scribed by Yoshida, E.; Tanaka, T.


Book ID
114618164
Publisher
IEEE
Year
2006
Tongue
English
Weight
288 KB
Volume
53
Category
Article
ISSN
0018-9383

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