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A capacitance relaxation method for studying surface states at the semiconductor-liquid junction

✍ Scribed by Kenkichiro Kobayashi; Shoichi Okamoto; Mitsunori Sukigara


Book ID
107792987
Publisher
Elsevier Science
Year
1987
Weight
852 KB
Volume
225
Category
Article
ISSN
0022-0728

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The interfacial electrical admittance of a semiconductor electrode exchanging majority carriers with a simple redox system is calculated from basic assumptions presented in a previous paper. Direct exchange and surface state mediated exchange are considered. The coupling between the occupancy of the