A breakdown voltage model for implanted resurf p-LDMOS device on n+ buried layer

✍ Scribed by Ming-Jiang Zhou; A. Van Calster

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 254 KB
• Volume: 37
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(94)90196-1