A BiCMOS wideband operational amplifier with 900 MHz gain-bandwidth and 90 dB DC gain
✍ Scribed by Mehdi Ehsanian; Bozena Kaminska
- Publisher
- Springer
- Year
- 1996
- Tongue
- English
- Weight
- 647 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0925-1030
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✦ Synopsis
A fully differential operational amplifier has been designed and fabricated for a novel high resolution and high frequency analog-to-digital converter(> 12-bit). The amplifier mainly consists of folded cascode structure with current source as output loads and common-mode feedback circuits. The technique of feedforward compensation is used in order to improve the settling time and gain bandwidth (GBW) of this amplifier. This amplifier is integrated in 0.8 mm BiCMOS process with an active die area of 0.1 mm 2. The DC gain of this amplifier is 90 dB. The GBW and phase margin of this amplifier is 900 MHz and 47 ~ respectively. The power dissipation is minimized by using BiCMOS technology and is about 25 mW for 2 pF load capacitance. This level of performance is competitive with CMOS and BiCMOS operational amplifier circuits previously reported by nearly two orders of magnitude.