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A 4.6GHz 162Mb SRAM design in 22nm tri-gate CMOS technology with integrated active VMIN-enhancing assist circuitry

✍ Scribed by Karl, Eric; Wang, Yih; Ng, Yong-Gee; Guo, Zheng; Hamzaoglu, Fatih; Bhattacharya, Uddalak; Zhang, Kevin; Mistry, Kaizad; Bohr, Mark


Book ID
111877014
Publisher
IEEE
Year
2012
Weight
317 KB
Series
undefined series for scimag
Volume
0
Category
Article

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