A 1-kW switchable damped class-E power amplifier for plasma processing applications

✍ Scribed by Ji-Yeon Kim; Sang-Hyun Chun; Dong-Hee Jang; Jong-Heon Kim; Gray P. Kennedy

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 381 KB
• Volume: 52
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.25512

✦ Synopsis

Abstract

In this article, a new highly efficient and highly stable 1 kW power amplifier is designed and fabricated for plasma processing applications.The efficiency of the generator was improved by using a class‐E type power amplifier consisting of one push–pull MOSFET and a high‐current driver IC instead of a conventional class‐C amplifier composed of several single ended MOSFETs. A switchable damper allows a selection of one of three different amplifier modes; these modes adjust the amplifier's efficiency and stability. The amplifier dimensions were reduced by 30% compared with the conventional class‐C power amplifier. Also, a drain efficiency of 80% was produced for a generator output power of 1 kW and operating frequency of 13.56 MHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2438–2441, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25512