A 0.7 V 850 μW CMOS LNA for UHF RFID reader
✍ Scribed by Jie Li; S. M. Rezaul Hasan
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 410 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
The design of a narrow-band cascoded CMOS inductive source-degenerated low noise amplifier (LNA) for 866 MHz UHF RFID reader is presented. Compared to other previously reported narrowband LNA designs, in this work the finite g ds (¼ 1/r 0 ) effect has been considered to improve the nanometric design, achieving simultaneous impedance and minimum F min noise matching at a very low power drain of 850 lW from a 0.7-V supply voltage. The LNA was fabricated using the IBM 130 nm CMOS process delivering a power gain (S 21 ) of %12 dB, a reverse isolation (S 12 ) of %À34 dB, and an input power reflection (S 11 @866 MHz) of %À12 dB. It had a minimum pass-band NF of around 2.2 dB and a 3rd order input referred intercept point (IIP3) of %À9.5 dBm.