Porous silicon was prepared by anodization of a p/p+ epitaxial c-Si wafer. Its structure was examined by electron microscopy, Raman spectroscopy, and infrared spectroscopy. The results of the examination show that the porous Si consists of many nano-scale pores and crystalline slices, and that there
โฆ LIBER โฆ
98/03940 Photovoltaic device applications of porous microcrystalline silicon
- Publisher
- Elsevier Science
- Year
- 1998
- Weight
- 209 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0140-6701
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โฆ Synopsis
07 Alternative energy sources (solar energy) 99iQ3937 Low-cost deposition of CulnSez (CIS) films for CdSl CIS solar cells Hermann, A. M. e? al. Solar Energy Materials and Solar Cells, 1998, 52, (31 4), 355-
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The aim of this experiment is to grow a thin silicon layer (<50ยตm) by Liquid Phase Epitaxy (LPE) onto porous silicon. This one acts as a sacrificial layer in order to transfer the 50 ยตm epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re-usable. In thi
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