is designed to obtain a high quality GaAs layer on Ge substrate by metalorganic chemical vapour deposition (MOCVD). Performance of a GaAs solar cell fabricated on Ge substrate with the buffer layer structure was compared with that with a conventional GaAs buffer layer and also that fabricated on GaAs substrate. A 23.18% (AMISG) conversion efficiency was successfully obtained for the cell fabricated on Ge substrate with the new buffer layer structure, while the cell fabricated on Ge substrate with the conventional GaAs buffer layer achieved 20.92%. Values of V,, and Js, for the cell fabricated on Ge substrate with the new buffer layer structure were approximately comparable to those of a 25.39% efficiency GaAs solar cell fabricated on GaAs substrate.
98101397
Characterization of CulnSez/CdS thin-film solar cells prepared using CBD Vidyadharan Pillai, P. K. and Vijayakumar, K. P. Solar Energy Martvials and Solar Cells, 1998, 51, (1) 47-54. The chemical bath deposition technique was used exclusively'to manufacture CuInSez/CdS thin-film heterojunction solar cells. The illuminated J-V characteristics of the devices prepared with different thicknesses of CdS and CuInSer were studied.
The optimal solar cell parameters were determined.
The J-V and C-V characteristics under dark condition and the spectral response were also studied for the best cell. A diode quality factor of 1.7 was obtained.
98lO1398
Chemical bath deposition of CdS buffer layer for GIGS solar cells