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974. Doping of epitaxial silicon films by phosphorus and arsenic in vacuum: V A Tolomasov, et al, Kristellograf, 18 (4), 1973, 882–884 (in Russian)

Book ID: 103460669
Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 145 KB
Volume: 24
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(74)90642-3

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Apparatus for preparation of silicon epi

Apparatus for preparation of silicon epitaxial films by vacuum sublimation: V A Tolomasov et al, Electronic Technology, Scient Techn Collect, Technology and Organization of Production, No 5, 1971, 11–18 (in Russian)

📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 168 KB