904. Variations in life time of charge carriers in high-resistivity silicon at bombardment by boron and phosphorus ions: N N Abramova et al, Microelectronics, Coll, No 1, Taganrog 1973, 149–155 (in Russian)

• Publisher: Elsevier Science
• Year: 1974
• Tongue: English
• Weight: 125 KB
• Volume: 24
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(74)90572-7