Comparative study of silicon and germani
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V.I. Shulga
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Article
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2007
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Elsevier Science
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English
β 155 KB
Sputtering of amorphous Si and Ge targets by 1-20 keV Ar ions has been studied using the binary-collision simulation. Special attention was given to the angular distribution of sputtered atoms; namely, the energy dependence of the exponent n in the function cos n h approximating the angular distribu