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900 keV gold ion sputter etching of silicon and metals

✍ Scribed by Gary A. Glass; Johnny F. Dias; Alexander D. Dymnikov; Bibhudutta Rout


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
443 KB
Volume
266
Category
Article
ISSN
0168-583X

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Comparative study of silicon and germani
✍ V.I. Shulga πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 155 KB

Sputtering of amorphous Si and Ge targets by 1-20 keV Ar ions has been studied using the binary-collision simulation. Special attention was given to the angular distribution of sputtered atoms; namely, the energy dependence of the exponent n in the function cos n h approximating the angular distribu