90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants

✍ Scribed by S.B. Felch; M.A. Foad; C. Olsen; F. Nouri; Y. Matsunaga; N. Natsuaki

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 136 KB
• Volume: 237
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2005.04.076